Organosilicon precursors for interlayer dielectric films with low dielectric constants
AssigneeAir Products and Chemicals, Inc.
InventorsJean Louise Vincent, Mark Leonard O'Neill, Howard Paul Withers, Jr., Scott Edward Beck, Raymond Nicholas Vrtis
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Abstract
A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
Claims56
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether, represented by one or more of structures I through III, or a silyl ether oligomer, represented by structure IV:
- (R2O)xSiR1(4−x) (I)
- (R3O)ySiHR1(3−y) (II)
- R13Si—O—R4—O—SiR13 (III)
- R1-((R3O)-Si-(R1))z-R1 (IV)
- wherein x is an integer from 1 to 3;
- y is 1 or 2;
- z is an integer from 2 to 6;
- R1 is one or more of H, fluorine, a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic;
- R2 is one or more of a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated C1 to C6 straight or branched chain alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic,
- R3 is one or more of R2, a C1 to 6 linear or branched alkyl, or a C3 to C8 substituted or unsubstituted cycloalkyl;
- and
- R4 is one or more of a branched or straight chain C1 to C6 alkyl, a C3 to C8 substituted or unsubstituted cycloalkyl, a C6 to C12 substituted or unsubstituted aromatic, a partially or fully fluorinated branched or straight chain C1 to C6 alkyl, a partially or fully fluorinated C3 to C8 cycloalkyl, or a partially or fully fluorinated C6 to C12 aromatic;
- optionally together with one or more additional reactive substance;
- to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more organosilicon compound containing one or more reactive side group selected from the group consisting of a C2 to C10 epoxide, a C2 to C8 carboxylate, a C2 to C8 alkyne, a C4 to C8 diene, a C3 to C5 strained cyclic group, and a C4 to C10 group that can sterically hinder or strain the organosilicon precursor;
- optionally together with one or more additional reactive substance;
- to form an interlayer dielectric film having a dielectric constant of 3.5 or less.
A method of forming a low dielectric constant interlayer dielectric film comprising reacting, under chemical vapor deposition conditions sufficient to deposit a film on a substrate, an organosilicon precursor comprising one or more silyl ether selected train the group consisting of diethoxymethylsilane, dimethylethoxysilane, dimethoxymethylsilane, dimethylmethoxysilane, phenoxydimethylsilane, diphenoxymethylsilane, dimethoxyphenylsilane, diethoxycyclohexyrsilane, tert-butoxydimethylsilane, and di(tert-butoky)methylsilane;
- to form an interlayer dielectric film having a dielectric constant of about 3.5 or less.
A method of forming a low dielectric constant interlayer dielectric film which comprises reading diethoxymethylsilane, under plasma vapor deposition conditions sufficient to deposit a film on a substrate, in the presence of carbon dioxide or helium, to form an interlayer dielectric film having a dielectric constant of about 2.5 to 3.5.
Dependencies are inferred from the claim text.