Method for eliminating reaction between photoresist and OSG

A process for producing a microelectroinc device which consists essentially of:

• (a) forming a first dielectric layer on a substrate;
• (b) forming an optional etch stop layer on the first dielectric layer;
• (c) forming an second dielectric layer on the first dielectric layer or the optional etch stop layer;
• (d) depositing a layer of a photoresist on a top surface of the second dielectric layer and imagewise removing a portion of the photoresist to define at least one via for the second dielectric layer;
• (e) removing the portions of the second dielectric layer and the optional etch stop layer which are under the removed portion of the photoresist thus forming at least one via down through the second dielectric layer and the optional etch stop layer, and removing the balance of the photoresist layer;
• (f) depositing a protective material on a top surface of the second dielectric layer and on inside walls and a floor of the at least one via;
• (g) depositing an additional photoresist layer on the protective material and imagewise removing a portion of the additional photoresist layer to define at least one trench for the second dielectric layer;
• (h) removing the portions of the protective material and the second dielectric layer which are under the removed portion of the additional photoresist layer thus forming at least one trench down through the second dielectric layer, and removing the portions of the first dielectric layer which are under the at least one via which was in the second dielectric layer thus forming at least one via down through the first dielectric layer;
• (i) removing the balance of the additional phororesist layer and the balance of the protective material;
• (j) lining a barrier metal on inside walls and a floor of the at least one trench, and on inside walls and a floor of the at least one via;
• and
• (k) filling the at least one trench and at least one via with a fill metal in contact with the barrier metal lining.

A process for producing a microelectronic device which consists essentially of:

• (a) forming a first dielectric layer on a substrate;
• (b) forming an optional etch stop layer on the first dielectric layer;
• (c) forming a second dielectric layer on the first dielectric layer or the optional etch stop layer;
• (d) depositing a layer of a photoresist on a top surface of the second dielectric layer and imagewise removing a portion of the photoresist to define at least one trench for the second dielectric layer;
• (e) removing the portions of the second dielectric layer which are under the removed portion of the photoresist thus forming at least one trench down through the second dielectric layer, and removing the balance of the photoresist layer;
• (f) depositing a protective material on a top surface of the second dielectric layer and on inside walls and a floor of the at least one trench;
• (g) depositing an additional layer of a photoresist on the protective material and imagewise removing a portion of the additional photoresist layer to define at least one via for the first dielectric layer;
• (h) removing the portions of each of the layers which are under the removed portion of the additional photoresist layer thus forming at least one via down through the protective material, the optional etch stop layer, and the first dielectric layer;
• (i) removing the balance of the additional photoresist layer and the balance of the protective material;
• (j) lining a barrier metal on inside walls and a floor of the at least one trench, and on inside walls and a floor of the at least one via;
• and
• (k) filling the at least one trench and at least one via with a fill metal in contact with the barrier metal lining.