Production method for silicon wafer and SOI wafer, and SOI wafer

A bonded SOI wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• subjecting the wafers closely contacted with each other via an oxide film to a heat treatment;
• reducing one of the wafers to a desired thickness to manufacture a bonded SOI wafer;
• and chamfering the front surface of the SOI layer side of the SOI wafer so that the chamfering width thereof is X3 (X3>X1).

A bonded SOI wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• implanting at least one of hydrogen ions and rare gas ions into the front surface of one of the wafers (a bond wafer) to form a fine bubble layer (an implanted layer) therein;
• subjecting the wafer closely contacted with the other wafer (a base wafer) via an oxide film to a heat treatment;
• separating the bond wafer in a thin film form at the fine bubble layer to manufacture a bonded SOI wafer;
• and chamfering the front surface of the SOI layer side of the SOI wafer so that the chamfering width thereof is X3 (X3>X1).

A bonded SOI wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• subjecting the wafers closely contacted with each other via an oxide film to a heat treatment;
• reducing one of the wafers to a desired thickness to manufacture a bonded SOI wafer;
• and mirror chamfering the chamfered portion of the front surface of at least the SOI layer side of the SOI wafer.

A bonded SOI wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers, implanting at least one of hydrogen ions and rare gas ions into the front surface of one of the wafers (a bond wafer) to form a fine bubble layer (an implanted layer) therein;
• subjecting the wafer closely contacted with the other wafer (a base wafer) via an oxide film to a heat treatment;
• separating the bond wafer in a thin film form at the fine bubble layer to manufacture a bonded SOI wafer;
• and mirror chamfering the chamfered portion of the front surface of at least the SOI layer side of the SOI wafer.

A bonded wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• subjecting the wafers directly contacted with each other to a heat treatment;
• reducing one of the wafers to a desired thickness to manufacture a bonded wafer;
• and chamfering the front surface of at least the thickness-reduced layer side of the bonded wafer so that the chamfering width thereof is X3 (X3>X1).

A bonded wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• implanting at least one of hydrogen ions and rare gas ions into the front surface of one of the wafers (a bond wafer) to form a fine bubble layer (an implanted layer) therein;
• subjecting the wafer directly contacted with the other wafer (a base wafer) to a heat treatment;
• separating the bond wafer in a thin film form at the fine bubble layer to manufacture a bonded wafer;
• and chamfering the front surface of at least the bond wafer side of the bonded wafer so that the chamfering width thereof is X3 (X3>X1).

A bonded wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• subjecting the wafers directly contacted with each other to a heat treatment;
• reducing one of the wafers to a desired thickness to manufacture a bonded wafer;
• and mirror chamfering the chamfered portion of the front surface of at least the thickness-reduced layer side of the bonded wafer.

A bonded wafer manufacturing method comprising:

• preparing two silicon wafers each having chamfered portions in which when the chamfering width of the front surface side of the silicon wafer is X1 and the chamfering width of the back surface side thereof is X2, X1<X2;
• mirror polishing the front surfaces of both the wafers;
• implanting at least one of hydrogen ions and rare gas ions into the front surface of one of the wafers (a bond wafer) to form a fine bubble layer (an implanted layer) therein;
• subjecting the wafer directly contacted with the other wafer (a base wafer) to a heat treatment;
• separating the bond wafer in a thin film form at the fine bubble layer to manufacture a bonded wafer;
• and mirror chamfering the chamfered portion of the front surface of at least the bond wafer side of the bonded wafer.