High resistivity silicon wafer with thick epitaxial layer and method of producing same
AssigneeSEH America, Inc.
InventorsOleg V. Kononchuk, Sergei V. Koveshnikov, Zbigniew J. Radzimski, Neil A. Weaver
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Abstract
A silicon wafer having a thick, high-resistivity epitaxially grown layer and a method of depositing a thick, high-resistivity epitaxial layer upon a silicon substrate, such method accomplished by: a) providing a silicon wafer substrate and b) depositing a substantially oxygen free, high-resistivity epitaxial layer, with a thickness of at least 50 μm, upon the surface of the silicon wafer. The silicon wafer substrate may then, optionally, be removed from the epitaxial layer.
Claims20
A method for producing a high-resistivity silicon wafer, comprising:
- providing a silicon wafer substrate, and
- depositing an epitaxial layer upon the surface of the silicon wafer substrate,
- wherein the epitaxial layer has a thickness of at least about 50 μm, a resistivity of at least 100 Ω·cm, and an interstitial oxygen content less than 1×1O17 per cm3.
A silicon wafer comprising:
- a silicon wafer substrate layer;
- and
- an epitaxial layer with a resistivity of 100 Ω·cm, a thickness of at least about 50 μm, and
- an interstitial oxygen content less than 1×1017 per cm3.
Dependencies are inferred from the claim text.