Methods of forming roughened layers of platinum and methods of forming capacitors

A method of forming a roughened layer of platinum, comprising:

• providing a substrate within a reaction chamber;
• flowing an oxidizing gas into the reaction chamber;
• flowing a platinum precursor into the chamber and depositing platinum from the platinum precursor over the substrate in the presence of the oxidizing gas;
• maintaining a temperature within the chamber at from about 0° C. to less than or equal to about 280° C. during the depositing, the deposited platinum having a rougher surface than it would have if the temperature were 300° C. or greater during the depositing.

A method of forming a capacitor, comprising:

• providing a substrate within a reaction chamber;
• flowing a first oxidizing gas into the reaction chamber;
• flowing a first platinum precursor into the chamber and depositing platinum from the first platinum precursor over the substrate in the presence of the first oxidizing gas while maintaining a temperature within the chamber at from about 0° C. to less than 300° C., and providing the deposited platinum to form a first capacitor electrode;
• forming a second capacitor electrode;
• and
• forming a dielectric layer, the dielectric layer ultimately residing between the first and second capacitor electrodes.

A method of forming a roughened layer of platinum, comprising:

• providing a substrate within a reaction chamber;
• flowing a platinum precursor into the reaction chamber and depositing platinum from the platinum precursor over the substrate;
• maintaining a temerature within the reaction chamber at from about 0° C. to less than 300° C. during the depositing;
• and
• flowing an oxidizing gas into the reaction chamber and exposing the platinum to the oxidizing gas.