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US 6,583,021 B2Granted
Method of fabricating capacitor having hafnium oxide
AssigneeHynix Semiconductor Inc.
InventorChang-Rock Song
Life of this patent
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Abstract
Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1−xHfxN layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1−xHfxN layer; and forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere.
Claims17
A method of fabricating a capacitor, the method comprising the steps of:
- (a) forming a Ti1−xHfxN layer on a substrate, wherein x is in a range from 0 to about 0.5;
- (b) forming an electrode layer on the Ti1−xHfxN layer;
- and
- (c) forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere,
- said capacitor comprising a bottom electrode formed from the Ti1−xHfxN layer, a dielectric layer is formed with the HfO2 layer, and a top electrode formed from the electrode layer.
2 more elements
A method of fabricating a capacitor, the method comprising the steps of:
- (a) forming an inter-layer dielectric layer on a silicon semiconductor substrate;
- (b) forming a contact hole by selectively etching the inter-layer dielectric layer to expose the surface of the semiconductor substrate;
- (c) forming a Ti1−xHfxN layer in the contact hole, wherein x is in a range from 0 to about 0.5;
- (d) forming an electrode layer on the Ti1−HfxN layer;
- and
- (e) forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere,
- said capacitor comprising a bottom electrode formed from the Ti1−xHfxN layer, a dielectric layer formed from the HfO2 layer, and a top electrode formed from the electrode layer.
4 more elements
Dependencies are inferred from the claim text.