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US 6,583,014 B1Granted
Horizontal surrounding gate MOSFETS
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Cheng Wu
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Abstract
A horizontal surrounding gate MOSFET comprises a monolithic structure formed in an upper silicon layer of a semiconductor substrate which is essentially a silicon-on-insulator (SOI) wafer, the monolithic structure comprising a source and drain portion oppositely disposed on either end of a cylindrical channel region longitudinally disposed between the source and drain. The channel is covered with a gate dielectric and an annular gate electrode is formed circumferentially covering the channel.
Claims18
A method for forming a horizontal surrounding gate MOSFET comprising:
- providing a substrate;
- forming on the surface of said substrate a monolithic structure of semiconductor material, the opposite ends of said structure comprising a source portion and a drain portion and the central portion of said structure being a substantially cylindrical channel portion longitudinally disposed between said source and drain portions, and supported by them above the substrate;
- forming a dielectric layer on the surface of said channel portion;
- forming an annular conducting layer on the dielectric layer, said conducting layer completely surrounding the channel circumferentially.
1 more element
Dependencies are inferred from the claim text.