Semiconductor thin film forming method
AssigneeFujitsu Limited
InventorsAkito Hara, Nobuo Sasaki
Life of this patent
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Abstract
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
Claims43
A polycrystal silicon thin film forming method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- applying short pulsed laser beams to the silicon layer to crystallize the silicon layer;
- and
- removing the heat reservoir layer.
A thin film transistor fabrication method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- applying short pulsed laser beams to the silicon layer to crystallize the silicon layer so as to form a channel layer;
- and
- removing the heat reservoir layer.
A liquid crystal display device fabrication method comprising the steps of:
- forming a silicon layer on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- applying short pulsed laser beams to the silicon layer to crystallize the silicon layer so as to form a channel layer of a transistor;
- and
- removing the heat reservoir layer.
A method for fabricating a semiconductor device including an active semiconductor film formed on an insulating substrate, comprising the steps of:
- forming a semiconductor film in the shape of an island on one surface of the insulating substrate;
- covering the semiconductor film with an isolation film;
- covering a side surface of the semiconductor film with a heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from said one surface of the insulating substrate to form the active semiconductor film;
- and
- removing the heat retaining film.
A method for fabricating a semiconductor device including an active semiconductor film formed on an insulating substrate, comprising the steps of:
- forming a semiconductor film in the shape of an island on one surface of the insulating substrate;
- covering the semiconductor film with an isolation film;
- covering the entire surface of the semiconductor film with the heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from the other surface of the insulating substrate to form the active semiconductor film;
- and
- removing the heat retaining film.
A method for forming a semiconductor thin film comprising the steps of:
- forming a semiconductor film in the shape of an island on one surface of an insulating substrate;
- covering the semiconductor film with an isolation film;
- covering a side of the semiconductor film with a heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from said one surface of the insulating substrate to form an active semiconductor film;
- and
- removing the heat retaining film.
A method for forming a semiconductor thin film, comprising the steps of:
- forming a semiconductor film in.the shape of an island on one surface of an insulating substrate;
- covering the semiconductor film with an isolation film;
- covering the entire surface of the semiconductor film with a heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from the other surface of the insulating substrate to form an active semiconductor film, and
- removing the heat retaining film.
A method for forming a silicon thin film, comprising the steps of:
- forming a silicon layer on one surface of an insulating substrate;
- forming a heat retaining film on at least a side of the silicon layer;
- applying continuous-wave energy beams to the silicon layer to crystallize the silicon layer, and
- removing the heat retaining film.
A polycrystal silicon thin film forming method comprising the steps of:
- forming a silicon layer in the shape of an island having a small-width region on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying short pulsed laser beams to the silicon layer to monocrystallize the small-width region of the silicon layer.
A thin film transistor fabrication method comprising the steps of:
- forming a silicon layer in the shape of an island having a small-width region on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying short pulsed laser beams to the silicon layer to monocrystallize the small-width region of the silicon layer so as to form a channel layer.
A liquid crystal display device fabrication method comprising the steps of:
- forming a silicon layer in the shape of an island having a small-width region on a substrate;
- forming a heat reservoir layer on an upper surface of the silicon layer and side surfaces of the silicon layer;
- and
- applying short pulsed laser beam to the silicon layer to monocrystallize the small-width region of the silicon layer so as to form a channel layer of a transistor.
A method of fabricating a semiconductor device including an active semiconductor film formed on an insulating substrate, comprising the steps of:
- forming a semiconductor film in the shape of an island having a small-width region on one surface of the insulating substrate;
- covering the semiconductor film with an isolation film;
- covering a side surface of the semiconductor film with a heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- and
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from one surface of the insulating substrate to form the active semiconductor film,
- wherein the small-width region is a channel region of the active semiconductor film.
A method of fabricating a semiconductor device including an active semiconductor film formed on an insulating substrate, comprising the steps of:
- forming a semiconductor film in the shape of an island having a small-width region on one surface of the insulating substrate;
- covering the semiconductor film with an isolation film;
- covering the entire surface of the semiconductor film with a heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- and
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from the other surface of the insulating substrate to form the active semiconductor film,
- wherein the small-width region is a channel region of the active semiconductor film.
A method of forming a semiconductor thin film comprising the steps of:
- forming a semiconductor film in the shape of an island having a small-width region on one surface of an insulating substrate;
- covering the semiconductor film with an isolation film;
- covering a side of the semiconductor film with the heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- and
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from said one surface of the insulating substrate to form an active semiconductor film.
A method of forming a semiconductor thin film comprising the steps of:
- forming a semiconductor film in the shape of an island having a small-width region on one surface of an insulating substrate;
- covering the semiconductor film with an isolation film;
- covering the entire surface of the semiconductor film with the heat retaining film, the isolation film being formed between the semiconductor film and the heat retaining film;
- and
- crystallizing the semiconductor film by applying energy beams to the semiconductor film from the other surface of the insulating substrate to form an active semiconductor film.
A method of forming a silicon thin film, comprising the steps of:
- forming a silicon layer in the shape of an island having a small-width region on one surface of an insulating substrate;
- forming a heat retaining film on at least a side of the silicon layer;
- and
- applying continuous-wave energy beams to the silicon layer to crystallize the silicon layer.
Dependencies are inferred from the claim text.