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US 6,582,993 B1Granted
Method of underfilling semiconductor device
AssigneeFujitsu Limited
InventorsShunji Baba, Kenji Kobae, Hidehiko Kira, Norio Kainuma
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AssigneeFujitsu Limited
InventorsShunji Baba, Kenji Kobae, Hidehiko Kira, Norio Kainuma
Estimating the term…
Prior to setting of a semiconductor device upon the surface of a wiring substrate, the fluid of a light curable reaction resin is supplied from a nozzle to the surface of the wiring substrate. When the predetermined amount of the fluid has been discharged from the nozzle, the fluid within the nozzle is irradiated through a transparent window defined in the nozzle. A hardening reaction is induced in the irradiated segment of the fluid. The reduction in the fluidity can be achieved in the irradiated segment of the fluid. The irradiated segment forms a partition mass in the fluid within the nozzle. A reliable split can thus be achieved between the partition mass and the fluid discharged from the tip end of the nozzle. The split can be utilized to control the supplied amount of the fluid at a higher accuracy.
A method of underfilling a semiconductor device, comprising:
A method of underfilling a semiconductor device, comprising:
A method of preliminary treatment for an underfill, comprising subjecting an underfill receiving region on a surface of a wiring substrate to irradiation of a plasma, while not irradiating the area of the surface surrounding the underfill receiving region.
A method of mounting a semiconductor device, comprising:
Dependencies are inferred from the claim text.