Specialized substrates for use in sequential lateral solidification processing
AssigneeThe Trustees of Columbia University in the City of New York
InventorJames S. Im
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Abstract
Substrates having modified effective thermal conductivity for use in the sequential lateral solidification process are disclosed. In one arrangement, a substrate includes a glass base layer, a low conductivity layer formed adjacent to a surface of the base layer, a high conductivity layer formed adjacent to the low conductivity layer, a silicon compound layer formed adjacent to the high conductivity layer, and a silicon layer formed on the silicon compound layer. In an alternative arrangement, the substrate includes an internal subsurface melting layer which will act as a heat reservoir during subsequent sequential lateral solidification processing.
Claims17
A substrate having modified effective thermal conductivity for use in the sequential lateral solidification process, comprising:
- (a) a base layer having a base layer conductivity and at least a top surface, said base layer comprising glass;
- (b) a low conductivity layer having a conductivity which is less than said base layer conductivity, a first side and a second side, said low conductivity layer first side formed adjacent to said top surface of said base layer;
- (c) a high conductivity layer having a conductivity which is greater than said base layer conductivity, a first side and a second side, said high conductivity layer first side formed adjacent to said second side of said low conductivity layer;
- and
- (d) a semiconductor layer formed on said second side of said high conductivity layer.
A substrate having modified effective thermal conductivity for use in the sequential lateral solidification process, comprising:
- (a) a base layer having a base layer conductivity and at least a top surface, said base layer comprising glass;
- (b) a low conductivity layer having a conductivity which is less than said base layer conductivity, a first side and a second side, said low conductivity layer first side formed adjacent to said top surface of said base layer;
- (c) a subsurface melting layer having a first side and a second side, said subsurface melting layer first side formed adjacent to said second side of said low conductivity layer;
- (d) a silicon compound layer having a first side and a second side, said silicon compound layer first side formed adjacent to said second side of said subsurface melting layer;
- and
- (e) a semiconductor layer formed on said second side of said silicon compound layer, wherein said subsurface melting layer is adapted to melt at a temperature which is less than or equal to a melting temperature of said semiconductor layer.
Dependencies are inferred from the claim text.