Electron beam modification of CVD deposited low dielectric constant materials

A process for reducing the dielectric constant of a chemical vapor deposited dielectric layer selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof, on a substrate which comprises exposing the chemical vapor deposited dielectric layer to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer.

A process for producing a dielectric layer on a substrate which comprises, positioning a substrate within a chemical vapor deposition apparatus;

• charging a monomeric or oligomeric dielectric which is a dielectric precursor suitable for chemical vapor deposition into the chemical vapor deposition apparatus;
• depositing the precursor, or depositing a reaction product formed from the precursor in the apparatus, as a layer onto a surface of a substrate, optionally heating the layer at a sufficient time and temperature to dry the layer;
• and then exposing the layer to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer, wherein the layer is selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof.

A process for producing a microelectronic device which comprises positioning a substrate within a chemical vapor deposition apparatus;

• charging a monomeric or oligomeric dielectric which is a dielectric precursor suitable for chemical vapor deposition into the chemical vapor deposition apparatus;
• depositing the precursor, or depositing a reaction product formed from the precursor in the apparatus, as a layer onto a surface of a substrate, optionally heating the layer at a sufficient time and temperature to dry the layer;
• and then exposing the layer to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer, wherein the layer is selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof.

A process for forming a dielectric layer on a substrate which comprises chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposition apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to thus form a layer on a surface of a substrate;

• and then exposing the layer to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer, wherein the layer is selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof.

A process for forming a dielectric layer on a substrate which comprises chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposition apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to thus form a layer on a surface of a substrate;

• heating the layer at a sufficient time and temperature to dry the layer;
• and then exposing the layer to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose modify the layer, wherein the layer is selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof.

A process for forming a dielectric layer on a substrate which comprises chemical vapor depositing a dielectric layer on a substrate and then exposing the chemical vapor deposited dielectric layer to electron beam radiation for a sufficient time, temperature, electron beam energy and electron beam dose to reduce the dielectric constant of the layer, wherein the layer is selected from the group consisting of Si—O—C materials, Si—C materials and combinations thereof.