Methods for repairing defects on a semiconductor substrate

A method of repairing defects on a substrate, the substrate having a barrier layer disposed in the cavities and field regions and a first conductive material having defective portions disposed in the cavities, the method comprising:

• providing an anode;
• applying a pad to the defective portions of the first conductive material, the pad making contact with the substrate;
• applying an electric current density between the anode and the barrier layer;
• and
• depositing a second conductive material from an electrolyte solution to the defective portions of the first conductive material, the electrolyte solution being introduced to the first conductive material between the pad and the substrate.

A method of repairing and forming a planar conductive layer on a substrate, the substrate having a barrier layer disposed in the cavities and field regions and a first conductive material having a defective portions disposed in the cavities, the method comprising:

• providing an anode;
• depositing a seed layer on the cavities and field regions of the substrate, the substrate comprising a dielectric layer;
• hydroplaning a pad above the substrate, the pad including fixed abrasive particles;
• applying an electric current density between the anode and the barrier and the seed layers;
• and
• depositing a second conductive material from an electrolyte solution to the defective portions of the first conductive material, the electrolyte solution being introduced to the first conductive material between the pad and the substrate, thereby forming the planar conductive layer on the substrate.