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US 6,582,568 B1Granted
First stage salicidation of cobalt during cobalt deposition or subsequent Ti or Tin cap deposition using energy from a directional plasma
AssigneeLSI Logic Corporation
InventorNewell E. Chiesl
Life of this patent
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Abstract
The present invention concerns an apparatus comprising a fixture and a sputtering device. The fixture may be configured to position a semiconductor wafer in a plasma. The sputtering device may be configured to sputter metal atoms onto a surface of the wafer in a direction perpendicular to the surface.
Claims20
An apparatus comprising:
- a fixture configured to position a wafer adjacent a plasma;
- a first target comprising a metal;
- a second target comprising a first material;
- and
- a sputtering device adapted to (i) sputter said metal from said first target onto a surface of said wafer and (ii) directionally sputter said first material from said second target through said plasma and onto said surface with a velocity sufficient to drive at least a first portion of said metal on said surface into said wafer.
2 more elements
An apparatus comprising:
- means for positioning a wafer adjacent a plasma;
- means for sputtering a metal onto a surface of said wafer;
- and
- means for directionally sputtering a first material through said plasma and onto said surface with a velocity sufficient to drive at least a first portion of said metal on said surface into said wafer.
1 more element
A method of processing a wafer comprising the steps of:
- (A) positioning said wafer adjacent a plasma;
- (B) sputtering a metal onto a surface of said wafer;
- and
- (C) directionally sputtering a first material through said plasma and onto said surface with a velocity sufficient to drive at least a first portion of said metal on said surface into said wafer.
1 more element
Dependencies are inferred from the claim text.