Method of growing epitaxial layers using magnetron sputter source in MBE apparatus
AssigneeNational Research Council of Canada
InventorJames Webb
Life of this patent
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Abstract
A magnetron sputter source is adapted to fit into a K-cell port in a molecular beam epitaxy apparatus. The MSE source has a protruding cylindrical body for insertion into the K-cell port. The cylindrical body is attached at its proximal end to a flange and has its distal end open. An array of permanent magnets is arranged at the distal end of the cylindrical body. A magnet return piece is mounted behind the permanent magnets. A sputter target is mounted in front of the permanent magnets, and cooling ducts within the cylindrical body carry a cooling medium to the sputter target.
Claims12
A method of growing epitaxial layers in a multilayered structure, comprising the steps of:
- a) providing a dual mode molecular beam epitaxy/magnetic sputter epitaxy apparatus comprising
- (i) a vacuum chamber having a K-cell port for normally receiving a K-cell in an MBE (molecular beam epitaxy) mode, and
- (ii) a nitrogen source for supplying nitrogen to said vacuum chamber;
- b) growing a first epitaxial layer on a substrate in said vacuum chamber by magnetron sputter epitaxy using a removable MSE (magnetron sputter epitaxy) source assembly replacing said K-cell in said K-cell port and comprising
- (i) a protruding cylindrical body forming an anode shield and attached at its proximal end to a flange forming an ultra high vacuum seal and having its distal end open,
- (ii) an array of permanent magnets at the distal end of said cylindrical body,
- (iii) a magnet return piece mounted behind said permanent magnets,
- (iv) a sputter target mounted in front of said permanent magnets, said permanent magnets being configured that the magnetic field lines radiate through the target surface, and
- (v) cooling ducts within said cylindrical body for carrying a cooling medium to said sputter target, and
- c) growing a second epitaxial layer over said first epitaxial layer in said vacuum chamber by molecular beam epitaxy with the aid of a K-cell inserted in said K-cell port.
A method of growing epitaxial layers in a multilayered structure, comprising the steps of:
- a) providing a dual mode molecular beam epitaxy/magnetic sputter epitaxy apparatus comprising
- (i) a vacuum chamber having a K-cell port for normally receiving a K-cell in an MBE (molecular beam epitaxy) mode, and
- (ii) a nitrogen source for supplying nitrogen to said chamber,
- b) growing an AlN buffer layer on a substrate in said vacuum chamber by magnetron sputter epitaxy using a removable MSE (magnetron sputter epitaxy) source assembly replacing said K-cell in said K-cell port and comprising
- (i) a protruding cylindrical body forming an anode shield and attached at its proximal end to a flange forming an ultra high vacuum seal and having its distal end open,
- (ii) an array of permanent magnets at the distal end of said cylindrical body,
- (iii) a magnet return piece mounted behind said permanent magnets,
- (iv) a sputter target mounted in front of said permanent magnets, said permanent magnets being configured that the magnetic field lines radiate through the target surface, and
- (v) cooling ducts within said cylindrical body for carrying a cooling medium to said sputter target, and
- c) growing a GaN epitaxial layer over said AlN buffer layer in said vacuum chamber by molecular beam epitaxy with the aid of a K-cell inserted in said K-cell port.
Dependencies are inferred from the claim text.