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US 6,582,063 B1Granted
Fluid ejection device
AssigneeHewlett-Packard Development Company, L.P.
InventorsVictorio A. Chavarria, Sadiq S. Bengali, Ronald L. Enck
Life of this patent
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Abstract
A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
Claims23
An ink-jet printhead comprising:
- a silicon wafer substrate;
- a polysilicon layer disposed over a source and drain area;
- a device isolation oxide layer on the substrate;
- an insulating layer disposed directly on the device isolation layer, wherein the insulation layer is not disposed over the polysilicon layer in a substrate contact area;
- and
- at least one substrate contact formed in the substrate contact area for electrically grounding said substrate, said at least one substrate contact extending through the insulating layer and the device isolation oxide layer to the substrate, wherein the substrate contact does not extend through the polysilicon layer.
3 more elements
An ink-jet pen comprising:
- an ink supply;
- a printhead fluidly coupled to the ink supply, wherein said printhead includes
- a silicon wafer substrate,
- a polysilicon layer disposed over a source and drain area,
- a device isolation oxide layer on the substrate,
- an insulating layer disposed directly on the device isolation layer, wherein the insulating layer is not disposed over the polysilicon layer in a substrate contact area, and
- at least one substrate contact formed in the substrate contact area for electrically grounding said substrate, said at least one substrate contact extending through the insulating layer and the device isolation oxide layer to the substrate, wherein the substrate contact does not extend through the polysilicon layer of the printhead.
4 more elements
A fluid ejection device, comprising:
- a silicon wafer substrate;
- a device isolation oxide layer on the substrate;
- an insulating layer disposed directly on the device isolation layer in a substrate contact area;
- a polysilicon layer disposed under the insulating layer near a source and drain, wherein the polysilicon layer is not disposed between the insulating layer and the substrate at the substrate contact area;
- and
- at least one substrate contact formed in the substrate contact area for electrically grounding said substrate, said at least one substrate contact extending through the insulating layer and the device isolation oxide layer to the substrate.
3 more elements
A fluid ejection device comprising:
- a silicon wafer substrate;
- by a device isolation oxide layer on the substrate;
- an insulating layer disposed directly on the device isolation layer in a substrate contact area;
- and
- at least one substrate contact formed in the substrate contact area, wherein there is no polysilicon between the silicon substrate and the insulating layer in the substrate contact area.
2 more elements
A cartridge comprising:
- a fluid supply;
- a printhead fluidly coupled to the fluid supply, wherein said printhead includes:
- a silicon wafer substrate;
- a device isolation oxide layer on the substrate;
- an insulating layer disposed on the device isolation oxide layer in a substrate contact area;
- a polysilicon layer disposed over a source and drain area;
- and
- at least one substrate contact formed in the substrate contact area for electrically grounding said substrate, said at least one substrate contact extending through the insulating layer and the device isolation oxide layer to the substrate but not through the polysilicon layer of the printhead, wherein the polysilicon layer is not in between the silicon wafer substrate and the insulating layer.
5 more elements
Dependencies are inferred from the claim text.