Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials
AssigneeMicron Technology, Inc.
InventorsPaul A. Farrar, Joseph E. Geusic
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Abstract
A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.
Claims50
A method of aligning at least on buried conductor pattern in a monocrystalline substrate, said method comprising the steps of:
- forming at least one alignment mark in association with said monocrystalline substrate;
- forming a plurality of cylindrical holes in said monocrystalline substrate, said cylindrical holes being aligned with respect to said at least one alignment mark;
- annealing said monocrystalline substrate to form at least one empty-spaced pattern within, and surrounded by, said monocrystalline substrate and below a surface of said monocrystalline substrate;
- forming at least one opening in said monocrystalline substrate which communicates with a respective empty-spaced pattern;
- and
- forming a conductive material in said empty-spaced pattern to form said at least one buried conductor pattern.
A method of aligning buried structures within a silicon substrate, said method comprising the steps of:
- forming at least one alignment mark in association with said silicon substrate;
- forming a plurality of cylindrical holes in said silicon substrate, said cylindrical holes being successively aligned with respect to said at least one alignment mark;
- annealing said silicon substrate to form at least one empty-spaced pattern within, and surrounded by, said silicon substrate and below a surface of said silicon substrate;
- forming at least one opening in said silicon substrate which communicates with a respective empty-spaced pattern;
- and
- forming a conductive material in said empty-spaced pattern.
Dependencies are inferred from the claim text.