Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof
AssigneeSony Corporation
InventorsTakeharu Asano, Masao Ikeda, Tsuyoshi Tojo, Shigetaka Tomiya
Life of this patent
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Abstract
In a semiconductor laser having a ridge-shaped stripe and made of nitride III-V compound semiconductors, opposite sides of the ridge are buried with a buried semiconductor layer of AlxGa1-xAs (0<×≦1), (AlxGa1-x)yIn1-yP (0≦×≦1, 0≦y≦1) or ZnxMg1-xSySe1-y (0≦×≦1, 0≦y≦1) to stably control transverse modes, thereby minimizing higher mode oscillation during a high power output, and improving the heat dissipation property.
Claims12
A semiconductor laser having a ridge-shaped stripe and made by using nitride III-V compound semiconductors, comprising:
- a buried layer made of A1xGa1-xAs (0≦×≦1) to bury opposite sides of said ridge-shaped stripe.
A semiconductor laser having a ridge-shaped stripe and made by using nitride III-V compound semiconductors, comprising:
- a buried layer made of (A1xGa1-x)yIn1-yP (0≦×≦1, 0≦y≦1) to bury opposite sides of saidridge-shaped stripe.
A semiconductor laser having a ridge-shaped stripe and made by using nitride III-V compound semiconductors, comprising:
- a buried layer made of ZnxMg1-xSySe1-y (0≦×≦1, 0≦y≦1) to bury opposite sides of said ridge-shaped stripe.
A semiconductor device having a projection on a nitride III-V compound semiconductor base body, comprising:
- a buried semiconductor layer made of A1x Ga1-xAs (0≦×≦1) to bury a portion around said projection.
A semiconductor device having a projection on a nitride III-V compound semiconductor base body, comprising:
- a buried semiconductor layer made of (A1x Ga1-x)yIn1-yP (0≦×≦1, 0≦y≦1) to bury a portion around said projection.
A semiconductor device having a projection on a nitride III-V compound semiconductor base body, comprising:
- a buried semiconductor layer made of Znx Mg1-xSySe1-y (0≦×≦1, 0≦y≦1) to bury a portion around said projection.
Dependencies are inferred from the claim text.