Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications

A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of:

• forming a dielectric layer over a semiconducting surface of a substrate;
• etching a selected location of the dielectric layer to form an opening therethrough;
• filling the opening with a conductive material;
• and
• planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer;
• annealing the top surface of said dielectric layer and the top surface of said conductive plug at a high temperature;
• and
• depositing the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the annealing step.

A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of:

• forming a dielectric layer over a semiconducting surface of a substrate;
• etching a selected location of the dielectric layer to form an opening therethrough;
• filling the opening with a conductive material;
• and
• planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer;
• after the planarizing step, exposing the top surface of the dielectric layer and the top surface of the conductive plug to a plasma;
• and
• depositing the conductive baffler layer on the top surface of the dielectric layer and the top surface of the conductive plug after the exposing step.