Dielectric films with low dielectric constants
OwnerPatrick A. Van Cleemput, Ravi Kumar Laxman +3inventors
InventorsPatrick A. Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T. Schulberg, Bunsen Nie
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Abstract
Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.
Claims45
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the at least one dielectric layer has a dielectric constant of at most about 2.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the at least one dielectric layer has a porosity of between about 25% and 75%.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the at least one dielectric layer has an average pore size of at most about 200 Angstroms.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties;
- wherein the caged siloxane moieties are linked using polymerizable side chains selected from the group consisting of acrylates, methacrylates, carboxylic acids, carboxylic acid halides, halosilanes, carboxylic acid esters, sulphonic acid esters, carbamoyl halides, epoxides, isocyanates, nitriles, olefins, styrenes, amines, alcohols, alkyl halides, aryl halides, sulphonic acids, sulphonic acid halides, phosphines, silanols, and silanes,
- wherein the at least one dielectric layer has a porosity of between about 25% and 75%.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the caged siloxane moieties have a cage diameter of between about 5 and 50 Angstroms.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the caged siloxane moieties are grafted on said integrated circuit or partially fabricated integrated circuit.
An integrated circuit or partially fabricated integrated circuit including one or more dielectric layers, at least one of the dielectric layers comprising:
- a plurality of chemically linked caged siloxane moieties,
- wherein the caged siloxane moieties are linked to one another by non-covalent self assembly.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the carrier is a supercritical fluid or near-supercritical fluid when contacting the partially fabricated integrated circuit.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a supercritical or near supercritical fluid carrier containing caged siloxane species;
- and
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a Damascene dielectric layer.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the caged siloxane species are selected from the group consisting of tris(dimethylvinyl)-POSS, methacrylfluoro(3)-POSS, and methacrylfluoro(13)-POSS.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the caged siloxane species have a cage diameter of between about 5 and 50 Angstroms.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the caged siloxane species are grafted on said integrated circuit or partially fabricated integrated circuit.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the caged siloxane species are linked using polymerizable side chains selected from the group consisting of acrylates, methacrylates, carboxylic acids, carboxylic acid halides, halosilanes, carboxylic acid esters, sulphonic acid esters, carbamoyl halides, epoxides, isocyanates, nitriles, olefins, styrenes, amines, alcohols, alkyl halides, aryl halides, sulphonic acids, sulphonic acid halides, phosphines, silanols, and silanes.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer,
- wherein the caged siloxane species are linked to one another using non-covalent self assembly.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer;
- and
- removing the carrier after linking the caged siloxane species.
A method of forming a dielectric layer in an integrated circuit, the method comprising:
- contacting a partially fabricated integrated circuit with a carrier containing caged siloxane species;
- linking the caged siloxane species to form the dielectric layer on the partially fabricated integrated circuit;
- and
- etching said dielectric layer to form a dielectric layer;
- and flushing the carrier from the partially fabricated integrated circuit after linking the caged siloxane species.
Dependencies are inferred from the claim text.