Method for purifying semiconductor gases
AssigneePraxair Technology, Inc.
InventorsSalim Sateria, Arthur Edward Holmer, Ronald William Shrewsbury
Life of this patent
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Abstract
This invention is directed a method for purifying an impure gas to produce an ultra-high purity gas comprising the steps of a) passing the impure liquefied gas through a first adsorption means to remove impurities from the liquid phase therein to produce a first purified fluid; b) passing the first purified fluid through an evaporation means to remove impurities therein to produce a second purified gas; and c) passing the second purified gas through a second adsorption means to remove impurities from the vapor phase therein to produce the ultra-high purity gas.
Claims18
A method for purifying an impure gas to produce an ultra-high purity gas comprising the steps of
- a. passing an impure liquefied gas through a first adsorption means to remove impurities from the liquid phase therein to produce a first purified fluid;
- b. passing said first purified fluid through an evaporation means to remove impurities therein to produce a second purified gas;
- and
- c. passing said second purified gas through a second adsorption means to remove impurities from the vapor phase therein to produce said ultra-high purity gas.
A method for purifying impure ammonia to produce ultra-high purity ammonia comprising the steps of
- a. passing impure liquefied ammonia through a molecular sieve to remove impurities from the liquid phase therein to produce a first purified ammonia fluid
- b. passing said first purified ammonia fluid to an evaporation means to remove impurities therein to produce a second purified ammonia gas;
- and
- c. passing said second purified ammonia gas through another molecular sieve to remove impurities from the vapor phase therein to produce ultra-high purity ammonia.
Dependencies are inferred from the claim text.