Method of forming thin film using atomic layer deposition method

A method of forming a thin film using an ALD method, comprising:

• placing a substrate into a reaction chamber;
• injecting a first reactant into the reaction chamber so that a portion of the first reactant is chemically adsorbed onto the substrate;
• purging the reaction chamber with a first inert gas to remove any first reactant that is only physisorbed over the substrate;
• injecting a second reactant into the reaction chamber to chemically exchange a first portion of the chemisorbed first reactant and to form a metal-oxygen atomic layer film;
• purging the reaction chamber with a second inert gas to remove any of the second reactant that is physisorbed over the substrate;
• and
• injecting a third reactant into the reaction chamber to form a metal oxide film in units of atomic layers by chemically exchanging a second portion of the chemisorbed first reactant,
• wherein the second reactant does not contain a hydroxide.

A method of forming a thin film using an ALD method, comprising:

• loading a substrate into a reaction chamber;
• injecting a first reactant into the reaction chamber so that a portion of the first reactant is chemically adsorbed into the substrate;
• purging the reaction chamber with a first inert gas to remove any of the first reactant that is only physisorbed over the substrate;
• injecting a second reactant into the reaction chamber to form the thin film in units of atomic layers by chemically exchanging the first reactant to further contribute to the formation of the second reactant;
• purging the reaction chamber with a second inert gas to remove any of the second reactant that is physisorbed over the substrate;
• and
• injecting a third reactant into the reaction chamber to remove impurities and improving the stoichiometry of the thin film.

A method of forming a thin film over a substrate using atomic layer deposition (ALD), comprising:

• placing the substrate into a reaction chamber;
• injecting a first reactant into the reaction chamber so that a portion of the first reactant is chemisorbed onto the substrate, the first reactant including a thin film atom and a ligand;
• purging the reaction chamber with a first inert gas to remove any of the first reactant that is only physisorbed onto the substrate;
• and
• injecting a second reactant, comprising an activated oxidizing agent, into the reaction chamber to form the thin film in atomic layers by a chemical reaction between the thin film atom and the second reactant, and to remove the ligand without generating by-products,
• wherein the activated oxidizing agent comprises O3 and the binding energy of the second reactant with respect to the thin film atom is larger than the binding energy of the ligand with respect to the thin film atom.

A method of forming a thin film over a substrate using atomic layer deposition (ALD), comprising:

• placing the substrate into a reaction chamber;
• injecting a first reactant into the reaction chamber so that a portion of the first reactant is chemisorbed onto the substrate, the first reactant including a thin film atom and a ligand;
• purging the reaction chamber with a first inert gas to remove any of the first reactant that is only physisorbed onto the substrate;
• injecting a second reactant into the reaction chamber to form the thin film in atomic layers by a chemical reaction between the thin film atom and the second reactant, and to remove the ligand without generating by-products;
• and
• purging the reaction chamber with a second inert gas, after injecting the second reactant, to remove any of the second reactant that is physisorbed onto the substrate,
• wherein the binding energy of the second reactant with respect to the thin film atom is larger than the binding energy of the ligand with respect to the thin film atom,
• wherein the first reactant comprises Al(CH3)3 and the second reactant comprises an activated oxidizing agent, and
• wherein the activated oxidizing agent comprises a material selected from the group consisting of O3, O2 plasma, and N2O plasma.

A method of forming a thin film over a substrate using atomic layer deposition (ALD), comprising:

• placing the substrate into a reaction chamber;
• injecting a first reactant, comprising Al(CH3)3, into the reaction chamber so that a portion of the first reactant is chemisorbed onto the substrate, the first reactant including a thin film atom and a ligand;
• purging the reaction chamber with a first inert gas to remove any of the first reactant that is only physisorbed onto the substrate;
• and
• injecting a second reactant, comprising an activated oxidizing agent, into the reaction chamber to form the thin film in atomic layers by a chemical reaction between the thin film atom and the second reactant, and to remove the ligand without generating by-products,
• wherein the activated oxidizing agent comprises O3 and the binding energy of the second reactant with respect to the thin film atom is larger than the binding energy of the ligand with respect to the thin film atom.