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US 6,573,537 B1Granted
Highly reflective ohmic contacts to III-nitride flip-chip LEDs
AssigneeLumileds Lighting U.S., LLC
InventorsDaniel A. Steigerwald, Steven D. Lester, Jonathan J. Wierer, Jr.
Life of this patent
Estimating the term…
Abstract
An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.
Claims19
A light-emitting device comprising:
- a III-nitride device comprising an n-type layer, a p-type layer, and an emission layer, interposing the n-type and p-type layers, being operative to emit light λ;
- and
- an n-electrode connected to the n-type layer and a p-electrode connected to the p-type layer, wherein both the n-electrode and the p-electrode are formed on a same side of the device and the n-electrode has a normal incidence reflectivity exceeding 80% for light emitted by the emission layer.
Dependencies are inferred from the claim text.