Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
AssigneeAngstron Systems, Inc.
InventorsTony P. Chiang, Karl F. Leeser
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Abstract
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.
Claims53
A sequential method for depositing a thin film onto a substrate in a chamber comprising:
- introducing a first reactant gas into said chamber;
- adsorption of at least one monolayer of said first reactant gas onto said substrate;
- removal of excess said first reactant gas from said chamber introduction of at least one ion generating feed gas into said chamber;
- introduction of at least one radical generating feed gas into said chamber;
- generating a plasma from said ion generating feed gas and said radical generating feed gas to form ions and radicals;
- exposing said substrate to said ions and said radicals;
- modulating said ions;
- and
- reacting said adsorbed monolayer of said first reactant gas with said ions and said radicals to deposit said thin film.
Dependencies are inferred from the claim text.