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US 6,566,679 B2Granted
Integrated semiconductor superlattice optical modulator
AssigneeIntel Corporation
InventorsDmitri E. Nikonov, Mario J. Paniccia
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Abstract
Devices and techniques for integrating a silicon superlattice optical modulator on a silicon substrate with other circuit elements. The superlattice structure is designed to convert the indirect bandgap structure of silicon into a direct bandgap structure to achieve more efficient optical absorption. The modulator can be fabricated based on a structure of a circuit element by using standard fabrication processes for silicon integrated circuits such as metal oxide semiconductor processing.
Claims9
A semiconductor device, comprising:
- a substrate of a semiconductor material having a front side surface and a back side surface opposing each other, said substrate configured to have a source region, a drain region, and a gate region proximate to said front side surface to provide a transistor, wherein said source and drain regions are to be maintained at different electrical potentials;
- a superlattice structure formed in said gate region to have alternating layers of charge layers formed of said semiconductor material and insulator layers that are substantially perpendicular to said first side surface;
- and
- a first reflector disposed is said substrate associated with said superlattice structure.
1 more element
Dependencies are inferred from the claim text.