High-frequency Circuit
AssigneeSony Corporation
InventorKazumasa Kohama
Life of this patent
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Abstract
A high-frequency circuit, wherein there is provided a switching transistor connected between an input terminal and an output terminal, with a gate electrode connected to a control terminal via a resistance element, and with an effective gate portion of the gate electrode divided into a plurality of sections, and arrangement is made of additional capacitance elements added in parallel to a capacitance between a gate and a source or drain of the switching transistor at positions in proximity to one ends of at least two effective gate sections of the plurality of effective gate sections. Preferably, there is provided a short-circuiting transistor similarly having an additional capacitance element between the output terminal Tout and a reference voltage supply line.
Claims17
A high-frequency circuit, comprising:
- a switching transistor including a source with a source electrode formed on a source region, a drain with a drain electrode formed on a drain region, and a gate with a gate electrode connected to an effective gate portion divided into a plurality of sections, said switching transistor being configured such that:
- (1) one of said source electrode and said drain electrode is connected to an input terminal,
- (2) the other of said source electrode and said drain electrode is connected to an output terminal, and
- (3) said effective gate portion is connected through a resistance element to a control terminal;
- and
- a first additional capacitance element located proximate ends of at least two of the plurality of gate sections and electrically connected between said gate electrode and either of said source electrode or said drain electrode,
- wherein said first additional capacitance element is formed by physically overlapping said gate electrode and either of said source electrode or said drain electrode.
Dependencies are inferred from the claim text.