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US 6,563,164 B2Granted
Compositionally modified resistive electrode
AssigneeOvonyx, Inc.
InventorsTyler A. Lowrey, Daniel Xu, Chien Chiang, Patrick J. Neschleba
Life of this patent
Estimating the term…
Abstract
An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
Claims28
An apparatus comprising:
- a volume of memory material;
- a conductor;
- and
- an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value.
1 more element
An apparatus comprising:
- a chalcogenide memory element;
- and
- a heater element in thermal communication with the chalcogenide memory element, the heater element comprising:
- a first zone having a first resistivity and a first thermal coefficient of resistivity;
- and
- a second zone having a second resistivity and a second thermal coefficient of resistivity, wherein the first resistivity is lower than the second resistivity, and wherein the second thermal coefficient of resistivity has a less negative or positive variation to positive temperature change than the first thermal coefficient of resistivity.
3 more elements
An apparatus comprising:
- a plurality of memory elements, each memory element comprising a volume of memory material having two resistivity values, the volume of memory material being settable to one of the resistivity values in response to a selected electrical input signal;
- a conductor coupled to each memory element;
- and
- an electrode coupled to the volume of memory material and disposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different resistivity value.
1 more element
An apparatus comprising:
- a dedicated memory chip having a plurality of first address lines and a plurality of second address lines, addressing circuitry coupled to the plurality of first address lines and the plurality of second address lines, a plurality of programmable elements, each of the plurality of programmable elements including a volume of material having two resistivity values, the volume of material being settable to one of the resistivity values in response to a selected electrical input signal, a conductor coupled to each of the plurality of programmable elements, and a plurality of electrodes respective ones of which are coupled to respective ones of the plurality of programmable elements and disposed between respective ones of the plurality of programmable elements and respective ones of one of the first plurality of address lines and the second plurality of address lines, each of the plurality of electrodes comprising a first portion having a first resistivity value and a second portion having a different second resistivity value.
An apparatus comprising:
- a volume of memory materials;
- a conductor;
- and
- an electrode coupled to the volume of memory material and exposed between the volume of memory material and the conductor, the electrode comprising a first portion having a first resistivity value and a second portion having a different second resistivity value, wherein the second portion comprises a material and the first portion comprises the material and a modifying species contributed by exposing the first portion to an ambient.
1 more element
Dependencies are inferred from the claim text.