Back to results
US 6,562,124 B1Granted
Method of manufacturing GaN ingots
AssigneeTechnologies and Devices International, Inc.
InventorsVladimir Ivantzov, Vitaliy Sukhoveev, Vladimir Dmitriev
Life of this patent
Estimating the term…
Abstract
A novel method for growing semiconductor material including GaN is disclosed. The method involves placing a first substance into a growth reactor, supplying a second gaseous substance into the grouth reactor, and applying electrical field to the second gaseous substance to produce the cry stalline compound material.
Claims14
A method of growing a crystalline Group III nitride compound material, comprising the steps of:
- placing a first substance into a chamber,
- supplying a second gaseous substance containing nitrogen into the chamber, and
- applying electrical field inside the chamber to produce the crystalline Group III nitride compound material grown from a liquid phase.
A method of growing a crystalline Group III nitride compound material, comprising the steps of:
- placing a first substance into a chamber,
- supplying a second gaseous substance containing nitrogen into the chamber, and
- applying electrical field inside the chamber to produce the crystalline Group III nitride compound material grown from a vapor phase.
Dependencies are inferred from the claim text.