Method of separating two layers of material from one another and electronic components produced using this process

A method of producing a freestanding semiconductor laser structure, which comprises:

• separating the semiconductor laser structure from a substrate during or after a manufacture thereof and substantially completely preserving the material of the semiconductor laser structure and the substrate, including:
• providing two layers of material having an interface boundary between the two layers, one of the two layers of material being a substrate and the other of the two layers of material being a semiconductor laser structure;
• irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through the substrate;
• absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface and inducing a material at the interface boundary to decompose;
• and
• separating the two layers of material;
• and
• producing an optical resonator of the semiconductor laser structure by cleaving a freestanding component structure along crystallographic lattice planes of epitaxial layers.

A method of separating two layers of material from one another and substantially completely preserving each of the two layers of material, the method which comprises:

• providing two layers of material having an interface boundary between the two layers, one of the two layers of material being a substrate and the other of the two layers of material being a semiconductor body formed at least partially of a material selected from the group consisting of GaN, AlN, InN, mixed crystals thereof, layer sequences, layer structures, and component structures thereof;
• irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through the substrate;
• absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface and inducing a material at the interface boundary to decompose;
• and
• separating the two layers of material.

A method of separating two layers of material from one another and substantially completely preserving each of the two layers of material, the method which comprises:

• providing two layers of material having an interface boundary between the two layers;
• providing a sacrificial layer at the interface boundary, the sacrificial layer formed at least partially of a nitride material selected from the group consisting of GaN, AlN, InN, and mixed crystals thereof;
• irradiating the interface boundary between the two layers or a region in vicinity of the interface boundary with electromagnetic radiation through one of the two layers;
• absorbing the electromagnetic radiation at the interface or in the region in the vicinity of the interface with the sacrificial layer and decomposing the sacrificial layer;
• and
• separating the two layers of material.