Nitride-contained semiconductor laser element and optical information reproducing device
AssigneeSharp Kabushiki Kaisha
InventorsYukio Yamasaki, Toshiyuki Okumura
Life of this patent
Estimating the term…
Abstract
A nitride-contained semiconductor laser element includes a layer formed of an Alx1Ga1−x1N (0.08≦x1≦0.2) lower clad layer, an active layer formed of an alternate multilayer structure including an InwGa1−wN well layer and an InvGa1−vN barrier layer, and an Alx2Ga1−x2N (0.08≦x2≦0.2) upper clad layer layered in this order on a substrate, one or a plurality of InzGa1−zN (0≦z≦0.2) buffer layer(s) of 200 nm or less in thickness being disposed in the lower clad layer and/or the upper clad layer.
Claims16
A nitride-contained semiconductor laser element comprising:
- an Alx1Ga1−x1N (0.08≦x1≦0.2) lower clad layer;
- an active layer formed of an alternate multilayer structure including a well layer and a barrier layer;
- and
- an Alx2Ga1−x2N (0.08≦X2≦0.2) upper clad layer, wherein
- one or a plurality of Inp1Ga1−p1N (0.001≦p1≦0.2) buffer layer(s) of 200 nm or less in thickness being sandwiched in at least one of said lower and upper clad layers.
An optical information reproducing device for reproducing recorded information recorded on an optical disk by performing photo-conversion of reflected light of
- laser light emitted onto the optical disk having an information recording surface, wherein the laser light is produced by a nitride-contained semiconductor laser element comprising:
- an Alx1Ga1−x1N (0.08≦x1≦0.2) lower clad layer;
- an active layer formed of an alternate multilayer structure including an InwGa1−wN well layer and an InvGa1−vN barrier layer;
- and
- an Alx2Ga1−x2N (0.08≦X2≦0.2) upper clad layer, wherein
- one or a plurality of Inp1Ga1−p1N (0.001≦p1≦0.2) buffer layer(s) of 200 nm or less in thickness being sandwiched in at least one of said lower and upper clad layers.
Dependencies are inferred from the claim text.