Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs
AssigneeMicron Technology, Inc.
InventorsTimothy B. Cowles, Michael A. Shore, Patrick J. Mullarkey
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AssigneeMicron Technology, Inc.
InventorsTimothy B. Cowles, Michael A. Shore, Patrick J. Mullarkey
Estimating the term…
A dual mode, full density/half density SDRAM includes a refresh controller specifically adapted to refresh memory cells of the SDRAM in the half density mode at a rate that is significantly slower than the rate at which the memory cells are refreshed in the full density mode. In the half density mode, the refresh controller increments a counter at a rate that is half the rate the counter is incremented in the full density mode. A refresh trigger pulse, which initiates the refresh of the memory cells, is generated when the counter has incremented to one of a first counter stage in the full density mode and a counter stage two stages beyond the first counter stage in the half density mode. Circuitry is also provided for ignoring some auto-refresh commands applied to the SDRAM in the half density mode so that the memory cells are also refreshed less frequently in the auto-refresh mode. The SDRAM also includes circuitry for remapping one of the row address bits for use as a column address bit in the half density mode so that the SDRAM can interface with system adapted for conventional dual mode SDRAMs.
A refresh controller for use in a dynamic random access memory (“DRAM”) having a full density mode and a reduced density mode, the refresh controller comprising:
A dynamic random access memory (“DRAM”) comprising:
Dependencies are inferred from the claim text.