Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device, comprising:

• a memory array including a plurality of memory cells wherein predetermined voltages are applied to selected memory cells to change threshold voltages thereof, thereby storing data therein according to the difference between the threshold voltages,
• wherein some memory cells in the memory array are used as spare memory cells,
• wherein said nonvolatile semiconductor memory device includes a latch circuit connected to each bit line of the memory array through a transmission switch, the memory array is capable of storing therein substitutional information for replacing a defective bit by a spare memory cell, and the substitutional information is capable of being transferred from the memory array to the latch circuit through the transmission switch and held in the latch circuit,
• wherein the memory array includes a set value storage area whose access is restricted in a normal operating state and which is configured writably in a predetermined operation mode, and the substitutional information is capable of being stored in the set value storage area,
• wherein the substitutional information stored in the memory array is transferred to and held in the latch circuit through the transmission switch upon power-up, and
• wherein the latch circuit has a positive-phase input terminal and a negative-phase input terminal, which are connected to two bit lines of the memory array, and the latch circuit captures memory information, based on complementary data stored in at least two memory cells connected to the two bit lines and holds the same therein.