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US 6,556,477 B2Granted
Integrated chip having SRAM, DRAM and flash memory and method for fabricating the same
AssigneeIBM Corporation
InventorsLouis L. Hsu, Carl Radens, Li-Kong Wang
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Abstract
A semiconductor memory system fabricated on one substrate is presented including an SRAM device, a DRAM device and a Flash memory device. In one embodiment the SRAM device is a high-resistive load SRAM device. In another embodiment the DRAM device is a deep trench DRAM device. A method is also presented for fabricating the memory system on one substrate having the SRAM device, the DRAM device and the Flash memory device.
Claims13
A method for fabricating a memory system comprising the steps of:
- providing a single substrate;
- fabricating at least one NVRAM cell on the single substrate;
- fabricating at least one DRAM cell having a deep trench capacitor on the single substrate;
- and
- fabricating at least one SRAM cell on the single substrate.
2 more elements
A method for fabricating a memory system comprising the steps of:
- providing a single substrate;
- fabricating at least one NVRAM cell on the single substrate;
- fabricating at least one DRAM cell on the single substrate;
- and
- fabricating at least one SRAM cell having a high resistive load element on the single substrate.
2 more elements
Dependencies are inferred from the claim text.