Magnetic memory with reduced write current

A magnetic memory comprising:

• first and second wirings intersecting each other and positioned apart from each other;
• a magnetoresistance effect film positioned between the first and second wirings and comprising,
• a magnetic recording layer facing the first wiring and configured to reverse a magnetization direction thereof by changing a direction of a magnetic field generated by passing writing currents through the first and second wirings, the change in direction being between a first direction and a second direction different from the first direction,
• a first magnetization pinned layer positioned between the first wiring and the magnetic recording layer and configured to hold a magnetization direction thereof when the direction of the magnetic field is changed between the first direction and the second direction, and
• a first nonmagnetic layer intervening between the magnetic recording layer and the first magnetization pinned layer;
• and
• a first magnetic film, the first magnetic film comprising,
• a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween, and
• a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion,
• wherein
• a width of the first magnetization pinned layer is narrower than a distance between the second portions, each width of the first nonmagnetic layer and the magnetic recording layer is wider than the width of the first magnetization pinned layer, and the second portions are in contact with a surface of the first nonmagnetic layer that faces the first portion and are apart from the first magnetization pinned layer.