Spin valve sensors with an oxide layer utilizing electron specular scattering effect

A method of manufacturing a magnetoresistive sensor comprising:

• forming a layer structure comprising:
• an oxide layer having opposing first and second surfaces;
• a pinned layer comprising a first surface contacting the first surface of the oxide layer and a second surface contacting a first surface of a non-magnetic spacer;
• a free magnetic layer comprising a first surface separated from the pinned layer by the non-magnetic spacer;
• a pinning layer comprising a first surface separated from the pinned layer by the oxide layer;
• and
• a seed layer comprising a first surface contacting a second surface of the pinning layer and a second surface contacting a first surface of a substrate.

A magnetoresistive sensor comprising:

• a specular reflection layer comprising opposing first and second surfaces;
• a pinned layer comprising a first surface contacting the first surface of the specular reflection layer and a second surface contacting a first surface of a non-magnetic spacer;
• a free magnetic layer comprising a first surface separated from the pinned layer by the non-magnetic spacer;
• a pinning layer comprising a first surface separated from the pinned layer by the specular reflection;
• and
• a seed layer positioned between the pinning layer and a substrate layer.