Method of manufacturing an active matrix-type liquid crystal device using a semiconductor thin film having an organic resin interlayer insulating film

A method of manufacturing a semiconductor device including at least a first substrate, a transparent second substrate, and a liquid crystal layer held between the first substrate and the second substrate, the method comprising the steps of:

• flattening a first insulating film formed on the first substrate;
• forming stripe-shaped electrodes on the first insulating film;
• forming a second insulating layer comprising an organic resin including a black dye or carbon black covering the stripe-shaped electrodes;
• and
• flattening the surfaces of the stripe-shaped electrodes and the surface of the second insulating layer so that both of the surfaces form a same plane, and boundary portions of the stripe-shape electrodes are filled with the second insulating layer;
• wherein the flattening step is carried out with a precision of not larger than 20% of a thickness of the electrodes.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a plurality of semiconductor elements on a substrate having an insulating surface;
• forming a first interlayer insulating film;
• flattening the first interlayer insulating film;
• forming pixel electrodes electrically connected to the semiconductor elements on the first interlayer insulating film;
• forming a second insulating layer comprising an organic resin including black dye or carbon black covering the pixel electrodes;
• and
• flattening the surfaces of the pixel electrodes and the surface of the second insulating layer so that both of the surfaces form a same plane, and boundary portions of the pixel electrodes are filled with the second insulating layer;
• wherein the flattening step is carried out with a precision of not larger than 20% of a thickness of the electrodes;
• wherein portions of the second insulating layer disposed in gaps between the adjacent electrodes function as a black matrix.

A method of manufacturing a semiconductor device including at least a substrate having a plurality of semiconductor elements formed in matrix and a plurality of pixel electrodes respectively connected to the semiconductor elements, and a liquid crystal held on the substrate, the method comprising the steps of:

• forming first interlayer insulating film;
• flattening the first interlayer insulating film;
• forming pixel electrodes electrically connected to the semiconductor elements on the first interlayer insulating film;
• forming a second insulating layer comprising an organic resin including black dye or carbon black covering the pixel electrodes;
• and
• flattening the surfaces of the pixel electrodes and the surface of the second insulating layer so that both of the surfaces form a same plane, and boundary portions of the pixel electrodes are filled with the second insulating layer;
• wherein the flattening step is carried out with a precision of not larger than 20% of a thickness of the electrodes;
• wherein portions of the second insulating layer disposed in gaps between the adjacent electrodes function as a black matrix.

A method of manufacturing a display device comprising:

• forming a plurality of switching elements over a substrate having an insulating surface;
• forming an interlayer insulating film comprising organic resin over said plurality of switching elements;
• leveling a surface of the interlayer insulating film by chemical mechanical polishing;
• forming a plurality of transparent pixel electrodes on said interlayer insulating film;
• forming an insulating layer comprising an organic resin including black dye or carbon black over said plurality of pixel electrodes to fill gaps of said pixel electrodes with said insulating layer;
• leveling a surface of at least the insulating layer by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.

A method of manufacturing a display device comprising:

• forming a plurality of switching elements on a silicon wafer;
• forming an interlayer insulating film comprising organic resin over said plurality of switching elements;
• leveling a surface of the interlayer insulating film by chemical mechanical polishing;
• forming a plurality of pixel electrodes on said interlayer insulating film;
• and
• forming an insulating layer comprising an organic resin including black dye or carbon black over said plurality of pixel electrodes to fill gaps of said pixel electrodes with said insulating layer;
• leveling a surface of at least the insulating layer by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.

A method of manufacturing a display device comprising:

• forming a plurality of switching elements over a substrate having an insulating surface;
• forming an interlayer insulating film comprising organic resin over said plurality of switching elements;
• leveling a surface of the interlayer insulating film by chemical mechanical polishing;
• forming a plurality of pixel electrodes on said interlayer insulating film;
• and
• forming an insulating layer comprising an organic resin including black dye or carbon black over said plurality of pixel electrodes to fill gaps of said pixel electrodes with said insulating layer;
• leveling a surface of at least the insulating layer by chemical mechanical polishing in order that an upper surface of the insulating layer in said gaps is flush with an upper surface of said pixel electrode.