US 6,556,061 B1 · Level shifter with zero threshold device for ultra-deep submicron CMOS designs

Abstract

A new level shifting circuit, using a zero threshold voltage device, is described. An input swings between a low supply and ground. An output swings between a high supply and ground. An inverter has input connected to the input of the level shifting circuit and output forming an inverted level shifting input. A first NMOS transistor has the gate connected to the level shifting input and the source connected to ground. A first zero threshold NMOS transistor has the gate connected to a low bias voltage and the source connected to the first NMOS transistor drain. A first PMOS transistor has the gate connected to the level shifting output, the source connected to the high supply, and the drain connected to the first zero threshold NMOS transistor drain. A second NMOS transistor has the gate connected to the inverted level shifting input and the source connected to ground. A second zero threshold NMOS transistor has the gate connected to the low bias voltage, the source connected to the second NMOS transistor drain, and the drain connected to the level shifting output. A second PMOS transistor has the gate connected to the first zero threshold NMOS transistor drain, the source connected to the high supply, and the drain connected to the level shifting output.

Claims20

Dependent claims

A level shifting circuit comprising:

a circuit input swinging between a low supply and ground;
a circuit output swinging between a high supply and said ground;
an inverter with input connected to said circuit input and with output forming an inverted circuit input;
a first NMOS transistor with gate connected to said circuit input and with source connected to said ground;
a first zero threshold NMOS transistor with gate connected to a low bias voltage and with source connected to said first NMOS transistor drain;
a first PMOS transistor with gate connected to said circuit output, with source connected to said high supply, and with drain connected to said first zero threshold NMOS transistor drain wherein said first PMOS transistor is a high voltage transistor;
a second NMOS transistor with gate connected to said inverted circuit input and with source connected to said ground;
a second zero threshold NMOS transistor with gate connected to said low bias voltage, with source connected to said second NMOS transistor drain, and with drain connected to said circuit output;
and
a second PMOS transistor with gate connected said first zero threshold NMOS transistor drain, with source connected to said high supply, and with drain connected to said circuit output wherein said first PMOS transistor is a high voltage transistor.

7 more elements

A level shifting circuit comprising:

a circuit input swinging between a low supply and ground;
a circuit output swinging between a high supply and said ground;
an inverter with input connected to said circuit input and output forming an inverted circuit input;
a first NMOS transistor with gate connected to said circuit input, with source connected to said ground, and wherein said transistor comprises a low voltage transistor;
a first zero threshold NMOS transistor with gate connected to a low bias voltage, with source connected to said first NMOS transistor drain and wherein said transistor comprises a high voltage transistor having a thick gate oxide;
a first PMOS transistor with gate connected to said circuit output, with source connected to said high supply, with drain connected to said first zero threshold NMOS transistor drain, and wherein said transistor comprises a high voltage transistor;
a second NMOS transistor with gate connected to said inverted circuit input, with source connected to said ground, and wherein said transistor comprises a low voltage transistor;
a second zero threshold NMOS transistor with gate connected to said low bias voltage, with source connected to said second NMOS transistor drain, with drain connected to said circuit output, and wherein said transistor comprises a high voltage transistor having a thick gate oxide;
and
a second PMOS transistor with gate connected to said first zero threshold NMOS transistor drain, with source connected to said high supply, with drain connected to said circuit output, and wherein said transistor comprises a high voltage transistor.

7 more elements

A level shifting circuit comprising:

a circuit input swinging between a low supply and ground;
a circuit output swinging between a high supply and said ground;
an inverter with input connected to said circuit input and output forming an inverted circuit input;
a first NMOS transistor with gate connected to said circuit input, with source connected to said ground, and wherein said transistor comprises a low voltage transistor;
a first zero threshold NMOS transistor with gate connected to said low supply, with source connected to said first NMOS transistor drain, and wherein said transistor comprises a high voltage transistor having a thick gate oxide;
a first PMOS transistor with gate connected to said circuit output, with source connected to said high supply, with drain connected to said first zero threshold NMOS transistor drain, and wherein said transistor comprises a high voltage transistor;
a second NMOS transistor with gate connected to said inverted circuit input, with source connected to said ground, and wherein said transistor comprises a low voltage transistor;
a second zero threshold NMOS transistor with gate connected to said low supply, with source connected to said second NMOS transistor drain, with drain connected to said circuit output, and wherein said transistor comprises a high voltage transistor having a thick gate oxide;
and
a second PMOS transistor with gate connected to said first zero threshold NMOS transistor drain, with source connected to said high supply, with drain connected to said circuit output, and wherein said transistor comprises a high voltage transistor.

7 more elements

Dependencies are inferred from the claim text.

Level shifter with zero threshold device for ultra-deep submicron CMOS designs

Life of this patent

Level shifter with zero threshold device for ultra-deep submicron CMOS designs

Life of this patent

Abstract

Claims20