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US 6,555,890 B2Granted
Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes
AssigneeSensors Unlimited, Inc.
InventorsJ. Christopher Dries, Michael Lange
Life of this patent
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Abstract
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
Claims15
An integrated dual sensitivity photodetector disposed in a single Indium Gallium Arsenide semiconductor substrate comprising:
- a region having a relatively high sensitivity photodetector;
- and
- a lower sensitivity region having a relatively lower sensitivity photodetector;
- wherein said dual sensitivity photodetector is capable of both providing an aiming signal to an optical aiming circuit and receiving a modulated optical high speed data signal.
1 more element
A photodetector circuit comprising:
- an integrated dual sensitivity photodetector disposed in a planar semiconductor material comprising a central region comprising a relatively high sensitivity photodiode device;
- a surrounding region comprising a relatively lower sensitivity photodiode wherein the central region and the surrounding region are substantially symmetrically arrayed about a central point and the two regions are radially separated into matched segments;
- and
- individual bias voltage means wherein a bias voltage is applied across each device separately such that the signal performance of each photodiode device is optimized.
1 more element
An InGaAs optical communication receiver integrated on a single chip comprising:
- an InGaAs avalanche photodiode formed on the chip;
- a plurality of InGaAs p-i-n photodiodes formed on the chip and positioned about the InGaAs avalanche photodiode;
- and
- separate bias means for the InGaAs avalanche photodiode and the InGaAs p-i-n photodiodes for separately biasing the photodiodes.
1 more element
An InGaAs photodetector comprising:
- an avalanche photodiode formed on a substrate;
- and
- at least one p-i-n photodiode formed on the substrate,
- wherein the avalanche photodiode and the at least one p-i-n photodiode can be independently biased.
1 more element
Dependencies are inferred from the claim text.