Back to results
US 6,555,887 B1Granted
Semiconductor device with multi-layer interconnection
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakeshi Kitani, Takeru Matsuoka, Masayoshi Shirahata
Life of this patent
Estimating the term…
Abstract
A semiconductor device with a polycide interconnection including a refractory metal silicide film improved in adherence with an interlayer insulation film, and a method of fabricating such a semiconductor device are provided. The local impurity concentration of a tungsten silicide film in the proximity of the interface between an interlayer oxide film and the tungsten silicide film is set to 5×1019 atms/cm3-2×1022 atms/cm3.
Claims14
A semiconductor device comprising:
- a silicon-containing film formed on a semiconductor substrate, and having a first impurity;
- a refractory metal silicide film formed on said silicon-containing film, and having a second impurity of a conductivity type identical to the conductivity type of said first impurity and of the same or different composition;
- and
- an insulation film formed on said refractory metal silicide film,
- said second impurity having a concentration in proximity to an interface between said insulation film and said refractory metal silicide film set to a range of 5×1019 atms/cm3-2×1022 atms/cm3, wherein the second impurity has a concentration distribution with a peak value at said interface between said insulation film and said refractory metal silicide film.
2 more elements
A semiconductor device comprising:
- a silicon-containing film formed on a semiconductor substrate, and having a first impurity;
- a refractory metal silicide film formed on said silicon-containing film, and having a second impurity of a conductivity type identical to the conductivity type of said first impurity and of the same or different composition;
- and
- an insulation film formed on said refractory metal silicide film,
- said second impurity having a concentration in proximity to an interface between said insulation film and said refractory metal silicide film set to a range of 5×1019 atms/cm3-2×1022 atms/cm3, wherein said silicon-containing film is directly connected to a surface of said semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.