Back to results
US 6,555,885 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorShigeki Komori
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a gate electrode structure including at least a metal film and a polysilicon film is disclosed. The polysilicon film of the semiconductor is doped with impurities several times so that an upper portion of the polysilicon film becomes higher in doping level than a lower portion of the same.
Claims5
A semiconductor device comprising:
- a substrate;
- a gate insulating film formed on the substrate;
- a gate electrode structure formed on the gate insulating film, the gate electrode structure including at least a metal film, a polysilicon film and a barrier layer therebetween, wherein:
- an upper portion of the polysilicon film is higher in doping level than a lower portion of the same;
- and the barrier layer does not directly contact the gate insulating film.
2 more elements
A semiconductor device comprising:
- a substrate;
- a gate insulating film formed on the substrate;
- a gate electrode structure formed on the gate insulating film, the gate electrode structure including at least a metal film, a polysilicon film and a barrier layer therebetween, wherein:
- an upper portion of the polysilicon film is higher in doping level than a lower portion of the same;
- and
- the barrier layer is formed from a metal silicide film and a metal nitride film formed thereon.
3 more elements
Dependencies are inferred from the claim text.