Semiconductor device for providing a noise shield
AssigneeOki Electric Industry Co., Ltd.
InventorTadamasa Murakami
Life of this patent
Estimating the term…
Abstract
A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the first guard ring with a prescribed gap therebetween. A metal film is formed opposing to each guard ring with an insulating film interposed therebetween; these metal films are connected to the opposing guard rings by interlayer wires. The metal films are each connected to external terminals providing a standard potential by individual metal wires from their respective electrodes.
Claims17
A semiconductor device comprising:
- a circuit region including transistors formed on a semiconductor substrate;
- a first guard ring of an ion diffused region formed around said circuit region;
- a second guard ring of a high concentration ion diffused region formed around said first guard ring with a prescribed gap therebetween;
- a first metal film electrically connected to the first guard ring via a contact hole formed through an insulating film;
- a second metal film electrically connected to the second guard ring via another contact hole formed through said insulating film;
- wherein said first metal film is supplied with a first potential;
- wherein said second metal film is supplied with said first potential;
- each of said transistors having a drain region and a source region;
- and
- wherein said first and second guard rings have higher concentrations of impurities than said drain region and said source region of said transistors.
A noise shield for a semiconductor device comprising:
- a transistor formation region for forming transistors;
- a first guard ring surrounding the transistor formation region so as to enclose the transistor formation region;
- a second guard ring surrounding the first guard ring so as to enclose the first guard ring;
- wires for applying a common potential to both the first and second guard rings;
- a transistor formed within the transistor formation region, the transistor having a drain region and a source region;
- and
- wherein the first and second guard rings have higher concentrations of impurities than the drain region and the source region of the transistor.
A guard ring structure for providing a noise shield comprising:
- a transistor formation region;
- plural transistors formed within the transistor formation region, each having a source region and a drain region;
- a first guard ring surrounding the transistor formation region;
- a second guard ring surrounding the first guard ring;
- a common external terminal to which the first and second guard rings are connected and to which a common potential is applied for supplying the common potential to the first and second guard rings;
- and
- wherein the first and second guard rings have higher concentrations of impurities than the drain regions and the source regions of said plural transistors.
Dependencies are inferred from the claim text.