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US 6,555,883 B1Granted
Lateral power MOSFET for high switching speeds
AssigneePower Integrations, Inc.
InventorsDonald Ray Disney, Wayne Bryan Grabowski
Life of this patent
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Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.
Claims15
A field-effect transistor comprising:
- elongated source and drain regions separated by a channel region;
- an insulated gate disposed over the channel region;
- a drain electrode coupled to the drain region;
- a gate electrode coupled to the insulated gate through first and second contacts located at respective first and second contact regions of the insulated,gate, the first and second regions being separated by a contact-free region;
- and
- a source electrode coupled to the source region, the source electrode including first and second segments, the first segment being interposed between the drain electrode and the gate electrode, the drain, source, and gate electrodes are disposed in a general plane.
3 more elements
A field-effect transistor comprising:
- elongated source and drain regions separated by a channel region,
- an insulated gate disposed over the channel region;
- a drain electrode coupled to the drain region;
- a gate electrode coupled to the insulated gate through first and second contacts located at respective first and second contact regions of the insulated gate, the first and second regions being separated by a contact-free region;
- and
- a source electrode coupled to the source region, the source electrode including first and second segments, the first segment being interposed laterally between the drain electrode and the gate electrode.
3 more elements
Dependencies are inferred from the claim text.