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US 6,555,880 B2Granted
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Jr., Kevin Kok Chan, Guy Moshe Cohen, Kathryn Wilder Guarini, Christian Lavoie, Ronnen Andrew Roy, Paul Michael Solomon
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Abstract
A semiconductor structure includes raised source and drain regions, where the raised source and drain regions are facet free and unconstrained to have a shape conforming to a same crystallographic axes with respect to each other.
Claims9
A semiconductor structure, comprising:
- raised source and drain regions, wherein the raised source and drain regions are unconstrained to have a shape conforming to a same crystallographic axes with respect to each other.
A semiconductor structure, comprising:
- a substrate;
- and
- raised source and drain regions, wherein the raised source and drain regions are other than lined up with respect to a crystallographic direction of said substrate, and include Ge.
Dependencies are inferred from the claim text.