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US 6,555,879 B1Granted
SOI device with metal source/drain and method of fabrication
AssigneeAdvanced Micro Devices, Inc.
InventorsZoran Krivokapic, Qi Xiang, Bin Yu
Life of this patent
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Abstract
A MOSFET and method of fabrication. The MOSFET includes a metal containing source and a metal containing drain; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.
Claims19
A MOSFET comprising:
- a metal containing source and a metal containing drain;
- a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate;
- a gate electrode disposed over the body and defining a channel interposed between the source and the drain;
- and
- a gate dielectric made from a high-K material and separating the gate electrode and the body;
- wherein the MOSFET is configured as an NMOS device;
- and
- wherein the gate electrode includes a lower portion defining a work function that controls the channel and an upper portion formed from a material used to form a gate of a nearby PMOS device.
5 more elements
A MOSFET comprising:
- a source having at least a portion comprising a metal and a drain having at least a portion comprising the metal;
- a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate, wherein the body forms junctions with the source portion comprising the metal and the drain portion comprising the metal;
- a gate electrode disposed over the body and defining a channel interposed between the source and the drain;
- and
- a gate dielectric made from a high-K material and separating the gate electrode and the body;
- and
- wherein the MOSFET is configured as an NMOS device.
4 more elements
Dependencies are inferred from the claim text.