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US 6,555,875 B2Granted
EL display device with a TFT
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRitsuko Kawasaki, Kenji Kasahara, Hisashi Ohtani
Life of this patent
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Abstract
A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconductor layer is crystallized by irradiation with laser light through both surfaces of the glass substrate.
Claims58
A semiconductor device comprising:
- a thin film transistor, the thin film transistor comprising:
- an island-like semiconductor layer;
- and
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate,
- wherein the stripe-like first insulating layer crosses the island-like semiconductor layer.
2 more elements
A semiconductor device comprising:
- a thin film transistor, the thin film transistor comprising:
- an island-like semiconductor layer;
- and
- a pair of stripe-like first insulating layers provided below the island-like semiconductor layer over one surface of a substrate,
- wherein the pair of stripe-like first insulating layers cross the island-like semiconductor layer.
2 more elements
A semiconductor device comprising:
- an island-like semiconductor layer;
- and
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate,
- wherein the stripe-like first insulating layer crosses the island-like semiconductor layer, and a channel formation region of a thin film transistor including the island-like semiconductor layer is provided adjacent to the stripe-like first insulating layer.
1 more element
A semiconductor device comprising:
- an island-like semiconductor layer including at least a channel formation region;
- and
- a pair of stripe-like first insulating layers provided below the island-like semiconductor layer over one surface of a substrate,
- wherein the channel formation region is provided between the pair of stripe-like first insulating layers.
1 more element
A semiconductor device comprising:
- an island-like semiconductor layer;
- and
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of the substrate,
- wherein the island-like semiconductor layer forms a channel formation region of a thin film transistor including the island-like semiconductor layer, the stripe-like first insulating layer crosses a channel length direction of the island-like semiconductor layer, and the channel formation region of the thin film transistor including the island-like semiconductor layer is provided adjacent to the stripe-like first insulating layer.
1 more element
A semiconductor device comprising:
- an island-like semiconductor layer;
- and
- a pair of stripe-like first insulating layers provided below the island-like semiconductor layer over one surface of the substrate,
- wherein the island-like semiconductor layer forms a channel formation region of a thin film transistor including the island-like semiconductor layer, the pair of stripe-like first insulating layers cross a channel length direction of the island-like semiconductor layer, and the channel formation region of the thin film transistor including the island-like semiconductor layer is provided between the pair of stripe-like first insulating layers.
1 more element
An EL display device comprising:
- a thin film transistor, the thin film transistor comprising:
- an island-like semiconductor layer;
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate;
- and
- a light emitting layer provided over the island-like semiconductor layer,
- wherein the stripe-like first insulating layer crosses the island-like semiconductor layer.
3 more elements
An EL display device comprising:
- a thin film transistor, the thin film transistor comprising:
- an island-like semiconductor layer;
- and
- a pair of stripe-like first insulating layers provided below the island-like semiconductor layer over one surface of a substrate;
- and
- a light emitting layer provided over the island-like semiconductor layer,
- wherein the pair of stripe-like first insulating layers cross the island-like semiconductor layer.
4 more elements
An EL display device comprising:
- an island-like semiconductor layer;
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate;
- and
- a light emitting layer provided over said island-like semiconductor layer,
- wherein the stripe-like first insulating layer crosses the island-like semiconductor layer, and a channel formation region of a thin film transistor including the island-like semiconductor layer is provided adjacent to the stripe-like first insulating layer.
2 more elements
An EL display device comprising:
- an island-like semiconductor layer including at least a channel formation region;
- a pair of stripe-like first insulating layers provided adjacent the island-like semiconductor layer over one surface of a substrate;
- and
- a light emitting layer provided over the island-like semiconductor layer,
- wherein the channel formation region is provided between the pair of stripe-like first insulating layers.
2 more elements
An EL display device comprising:
- an island-like semiconductor layer;
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate;
- and
- a light emitting layer provided over the island-like semiconductor layer,
- wherein the island-like semiconductor layer forms a channel formation region of a thin film transistor including the island-like semiconductor layer, the stripe-like first insulating layer crosses a channel length direction of the island-like semiconductor layer, and the channel formation region of the thin film transistor including the island-like semiconductor layer is provided adjacent to stripe-like first insulating layer.
2 more elements
An EL display device comprising:
- an island-like semiconductor layer;
- a pair of stripe-like first insulating layers provided below the island-like semiconductor layer on one surface of the substrate;
- and
- a light emitting layer provided over the island-like semiconductor layer,
- wherein the island-like semiconductor layer forms a channel formation region of a thin film transistor including the island-like semiconductor layer, the pair of stripe-like first insulating layers cross a channel length direction of the island-like semiconductor layer, and the channel formation region of the thin film transistor including the island-like semiconductor layer is provided between the pair of stripe-like first insulating layers.
2 more elements
An EL display device comprising:
- an island-like semiconductor layer;
- a stripe-like first insulating layer provided below the island-like semiconductor layer over one surface of a substrate;
- and
- a first electrode made of a conductive film with reflectivity provided over the island like semiconductor layer;
- a light emitting layer provided over the first electrode;
- a second electrode made of a transparent conductive film provided over the light emitting layer,
- wherein the stripe like first insulating layer crosses the island-like semiconductor layer is provided adjacent to the stripe-like first insulating layer.
4 more elements
Dependencies are inferred from the claim text.