US 6,555,871 B1 · Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor

Abstract

The present invention provides a bipolar transistor for use in increasing a speed of a flash memory cell having a source region and a drain region and first and second complementary tubs. In one embodiment, a base for the bipolar transistor is located in the first complementary tub. The first complementary tub functions as a collector for the bipolar transistor. The bipolar transistor base also uniquely functions as the source region. The bipolar transistor's emitter is also located in the first complementary tub and proximate the base. For example, the emitter may be located adjacent the base or actually located in the base. In an additional embodiment, the opposing bases and emitters are located on opposing sides of and proximate to the flash memory cell.

Claims20

Dependent claims

For use in increasing a speed of a flash memory cell having a source region and a drain region and first and second complementary tubs, a bipolar transistor, comprising:

a base region located in the first complementary tub, the base region including;
a lightly doped portion doped with a base dopant;
and
a heavily doped portion doped with the base dopant and located within the lightly doped portion, the heavily doped portion also functioning as the source region;
and
an emitter located in the lightly doped portion and located adjacent the heavily doped portion, the first complementary tub functioning as a collector for the bipolar transistor.

3 more elements

Dependencies are inferred from the claim text.

Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor

Life of this patent

Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor

Life of this patent

Abstract

Claims20