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US 6,555,855 B2Granted
Solid state imaging device
AssigneeNEC Corporation
InventorYukiya Kawakami
Life of this patent
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Abstract
Minority carriers generated by photoelectric conversion in an isolation layer and a semiconductor region with the same conduction type as that of the isolation layer are provided with an effective diffusion length owing to a trench formed in the isolation layer and with no path, which could be a straight escape route for the minority carriers, and false signals, therefore, scarcely enters to a neighboring cell, so that smear and color interference can be suppressed.
Claims19
A solid state imaging device comprising:
- a first conduction type semiconductor region;
- a plurality of photodiode diffusion layers with the first conduction type formed in said semiconductor region;
- opposite conduction type isolation layers formed shallower than a plurality of said photodiode diffusion layers in said semiconductor region and separating at least a plurality of said photodiode diffusion layers from each other;
- and
- trenches formed in said isolation layers and filled with an insulator material.
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A solid state imaging device, comprising:
- a semiconductor region of a first conduction type;
- plural photodiodes comprising photodiode diffusion layers of the first conduction type formed to a first depth in the semiconductor region;
- isolation layers of a second conduction type formed to a second depth shallower than the first depth and separating the photodiode diffusion layers from one another;
- trenches within in the isolation layers in regions of the isolation layers separating the photodiode diffusion layers from one another;
- and
- an insulator material filling the trenches.
3 more elements
Dependencies are inferred from the claim text.