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US 6,555,852 B1Granted
Bipolar transistor having an emitter comprised of a semi-insulating material
AssigneeAgere Systems Inc.
InventorThomas J. Krutsick
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Abstract
The present invention provides a bipolar transistor having a collector located in a semiconductor substrate having a given bandgap, and a base in contact with the collector. The base has a bandgap less than the bandgap of the substrate. In addition, the bipolar transistor further includes an emitter located over the base, where the emitter has a bandgap greater than the bandgap of the substrate. A method of forming a bipolar transistor, and an integrated circuit incorporating the bipolar transistor or the method, are also disclosed.
Claims13
A bipolar transistor, comprising:
- a collector located in a semiconductor substrate having a given bandgap;
- a base in contact with the collector, the base having a bandgap less than the bandgap of the substrate;
- and
- an emitter located over the base and having a bandgap greater than the bandgap of the substrate.
1 more element
An Integrated Circuit, comprising:
- passive devices formed over a substrate;
- dielectric layers;
- a bipolar transistor, including:
- a collector located in a semiconductor substrate having a given bandgap;
- a base in contact with the collector, the base having a bandgap less than the bandgap of the substrate;
- and
- an emitter located over the base and having a bandgap greater than the bandgap of the substrate;
- and
- interconnections, created in the dielectric layers, connecting the passive devices and the bipolar transistor to form an operative integrated circuit.
6 more elements
Dependencies are inferred from the claim text.