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AssigneePioneer Corporation
InventorsAtsushi Watanabe, Toshiyuki Tanaka, Hiroyuki Ota
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A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.
A nitride semiconductor device, manufactured by successively forming a group III nitride semiconductor layer (InxGa(1−x−y)AlyN (0≦x≦1, 0≦y≦1) on a flat surface of a sapphire substrate;
A nitride semiconductor device manufactured by successively forming a group III nitride semiconductor layer (InxGa(1−x−y)AlyN (0≦x≦1, 0≦y≦1) on a flat surface of a sapphire substrate, said device comprising:
A nitride semiconductor device manufactured by successively forming a group III nitride semiconductor layer (InxGa(1−x−y)AlyN (0≦x≦1, 0≦y≦1) on a flat surface of a sapphire substrate, said device comprising:
A nitride semiconductor device manufactured by successively forming a group III nitride semiconductor layer (InxGa(1−x−y)AlyN (0≦x≦1, 0≦y≦1) on a flat surface of a sapphire substrate, said device comprising:
Dependencies are inferred from the claim text.