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US 6,555,843 B1Granted
Semiconductor device and method for forming the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toshiji Hamatani
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Abstract
A novel structure of TFT is described. In the structure of TFT, an anodic oxidation film, which is a material composing a gate electrode, is laid at the side of gate electrode. An electrode, which is connected to a source, drain region, is in contact with the upper surface and the side of the source, drain region, and extended on the upper surface of an insulation film which is laid on the gate electrode. In the preparation process of TFF, it can be completed by using only two sheets of mask.
Claims13
A semiconductor device comprising:
- a substrate having an insulating surface;
- a plurality of pixel electrodes arranged in a matrix form over said substrate;
- a plurality of thin film transistors formed over said substrate, each of said thin film transistors comprising a semiconductor layer comprising crystalline silicon and including source, drain and channel regions therein and a gate electrode located over the channel region with a gate insulating film interposed therebetween;
- a plurality of first signal lines extending in a first direction over said substrate and including the gate electrodes of said thin film transistors, wherein said first signal lines and said gate electrodes comprise a metal;
- a plurality of second signal lines extending across and over said first signal lines,
- wherein side surfaces of said first signal lines and said gate electrodes are covered by an oxide film comprising an oxide of said metal and a top surface of said first signal lines and said gate electrodes is covered with an insulating film comprising silicon oxide.
3 more elements
A semiconductor device comprising:
- a substrate having an insulating surface;
- a plurality of pixel electrodes arranged in a matrix form over said substrate;
- a plurality of thin film transistors formed over said substrate, each of said thin film transistors comprising a semiconductor layer comprising crystalline silicon and including source, drain and channel regions therein and a gate electrode located over the channel region with a gate insulating film interposed therebetween;
- a plurality of first signal lines extending in a first direction over said substrate and including the gate electrodes of said thin film transistors, wherein said first signal lines and said gate electrodes comprise aluminum;
- a plurality of second signal lines extending across and over said first signal lines,
- wherein side surfaces of said first signal lines and said gate electrodes are covered by an oxide film comprising aluminum oxide and a top surface of said first signal lines and said gate electrodes is covered with an insulating film comprising silicon oxide.
3 more elements
A semiconductor device comprising:
- a substrate having an insulating surface;
- at least one pixel electrode over said substrate;
- at least one n-channel type thin film transistor and one p-channel type thin film transistor electrically connected to said pixel electrode, each of said thin film transistors comprising a semiconductor layer comprising crystalline silicon and including source, drain and channel regions therein;
- a first signal line extending in a first direction over said substrate and including at least first and second gate electrodes of said n-channel type thin film transistor and said p-channel type thin film transistor wherein said first and second gate electrodes are located over the channel regions of the n-channel type and the p-channel type thin film transistors;
- a second signal line extending across and over said first signal line,
- wherein side surfaces of said first signal line and said first and second gate electrodes are covered by an oxide film comprising aluminum oxide and a top surface of said first signal line and said first and second gate electrodes is covered with an insulating film comprising silicon oxide.
3 more elements
Dependencies are inferred from the claim text.