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US 6,555,825 B1Granted
Ion implanter
AssigneeApplied Materials, Inc.
InventorsRobert John Clifford Mitchell, Keith Relleen, Justin Lowe
Life of this patent
Estimating the term…
Abstract
An ion implanter having a scanning arm which can pass vertically through ion beam, having a wafer loading/unloading position above the beam. The scanning arm also has capability for movement of wafer in its own plane when tilted relative to the beam, and there is also disclosure of a double scanning arm arrangement generating to/from a single wafer loader/unloader.
Claims14
An ion implanter for serially processing single wafers comprising
- a vacuum chamber,
- a substrate holder in the vacuum chamber,
- an ion beam generator for generating a beam of ions to be implanted,
- a beam scanner for scanning the beam in a horizontal plane across a target substrate on the holder, and
- a scanning mechanism comprising an arm having an inner end carrying the substrate holder and an arm actuator horizontally spaced from the scanned beam,
- said scanning mechanism being operative to scan the substrate holder in a generally vertical direction through the plane of the beam for implantation of a wafer, and having a loading and unloading position in which the substrate holder supports a substrate in a substantially horizontal orientation at a position above the plane of the beam.
3 more elements
Dependencies are inferred from the claim text.